PART |
Description |
Maker |
IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL |
128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
IS65WV25616DBLL-55CTLA3 IS62WV25616DALL-55TI IS62W |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
IS65WV25616BLL IS65WV25616BLL-55TA1 IS65WV25616BLL |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
IS66WV1M16DALL IS66WV1M16DBLL |
16Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
AND8139D NL17SV16XV5T2 AND8139 NL17SV00XV5T2 NL17S |
2-Input OR Gate, Ultra-Low Voltage Non Inverting Buffer, Ultra Low Voltage Single 2-Input NOR Gate, Ultra-Low Voltage Single 2-Input NAND Gate, Ultra-Low Voltage ULTRA-LOW VOLTAGE MINIGATE DEVICES SOLVE 1.2 V INTERFACE PROBLEMS
|
ONSEMI[ON Semiconductor]
|
BS616UV4010EI BS616UV4010 BS616UV4010BC BS616UV401 |
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
|
BSI[Brilliance Semiconductor]
|
BS62UV4000STI BS62UV4000 BS62UV4000EC BS62UV4000EI |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit
|
BSI[Brilliance Semiconductor]
|
BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV802 |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开 Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
6206-35/BXAJC 6206-45/BXAJC 6206-45/BYAJC 6206-100 |
x8 SRAM Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits High-Voltage, Low-Current Voltage Monitors in SOT Packages Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits x8的SRAM
|
ITT, Corp.
|
BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV402 |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|